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| MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50CY-H * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION UPS, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 80 20 27 B2 E2 (7) 6.5 C2 E1E2 B2 E2 10.5 13 10.5 C1 34 C2 E1E2 C1 12 E1 B1 E1 B1 Tab#110, t=0.5 M5 31 LABEL (8) 22.5 6.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=50A, IB1=-IB2=1A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.75 -- 1.5 12 3.0 0.4 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C IB=1A 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=5.0V COLLECTOR CURRENT IC (A) 80 IB=0.65A IB=0.3A DC CURRENT GAIN hFE VCE=2.0V 60 IB=0.2A 40 IB=0.1A 20 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.2 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 VCE=2.0V Tj=25C VBE(sat) SATURATION VOLTAGE VCE(sat) IB=0.65A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 1.6 2.0 2.4 2.8 3.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 Tj=25C Tj=125C 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 IC=50A 2 SWITCHING TIME 10 1 7 VCC=300V 5 IB1=-IB2=1A 4 Tj=25C 3 Tj=125C 2 10 0 7 5 4 3 2 10 0 ts ton tf 2 3 4 5 7 10 1 2 3 4 5 7 10 2 1 IC=20A IC=30A 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 REVERSE BIAS SAFE OPERATING AREA 160 Tj=125C COLLECTOR CURRENT IC (A) 2 ts, tf (s) ts 10 1 VCC=300V 7 IB1=1A 5 IC=50A Tj=25C 4 Tj=125C 3 2 tf 10 0 7 5 4 3 10 -1 2 3 4 5 7 10 0 140 120 100 80 60 40 20 0 0 200 400 600 800 IB2=-1A -3A -5A -10A SWITCHING TIME 2 3 4 5 7 10 2 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 10 DERATING FACTOR OF F. B. S. O. A. 100 90 SECOND BREAKDOWN AREA COLLECTOR CURRENT IC (A) 10 D C m s 50 10 0 0 ss DERATING FACTOR (%) COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 0.5 0.4 1m s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 0.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 Tj=25C Tj=125C VCC=300V IB1=-IB2=1A 10 1 400 Irr (A), Qrr (c) 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 10 0 Qrr 7 5 3 trr 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 10 1 7 5 3 2 Irr |
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